摘要
FeSe0.1Te0.9 thin films were deposited on single crystal SrTiO3 (STO) (100) substrates by a pulse laser deposition (PLD) technique. CeO2 nanolayer was introduced as either cap layer or buffer layer to investigate its pinning effects in FeSe0.1Te0.9 thin films. The results show improved film quality after doping with CeO2 nanolayers, and no impurity phase was identified. All the samples achieve T-c of 12.
- 出版日期2014-10