摘要
This paper presents a novel dual direction silicon controlled rectifier device for electrostatic discharge (ESD) protection. An additional p-type ESD implantation layer was added to realize the proposed device (EDDSCR), playing the role of P-well in the traditional Dual SCR. A modified EDDSCR (MEDDSCR) with lower trigger voltage by inserted a PMOS is also proposed. TCAD simulation indicates that the proposed device has advantages of low trigger voltage, low conduction resistance, and good latch-up immunity, making it very suitable for ESD protection in I/O and Core circuits of 28 nm CMOS process.
- 出版日期2016
- 单位电子科技大学