Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal-Oxide-Semiconductor Field-Effect Transistor Electrical Characteristics

作者：Kumagai Yuki^*; Abe Kenichi; Fujisawa Takafumi; Watabe Shunichi; Kuroda Rihito; Miyamoto Naoto; Suwa Tomoyuki; Teramoto Akinobu; Sugawa Shigetoshi; Ohmi Tadahiro

来源：Japanese Journal of Applied Physics, 2011, 50(10): 106701.

DOI：10.1143/JJAP.50.106701

To develop a new process technology for suppressing the variability and noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) for large-scale integrated circuits, accurate and rapid measurement test circuits for the evaluation of a large number of MOSFET electrical characteristics were developed. These test circuits contain current-to-voltage conversion circuits and simple scanning circuits in order to achieve rapid and accurate evaluation for a wide range of measurement currents. The test circuits were fabricated and the variabilities and noises in drain-source current, gate leakage current, and p-n junction leakage current were evaluated using a large-scale test circuit.

• 出版日期2011-10