Preparation and field electron emission of microcrystalline diamond deposited on a porous silicon substrate

作者:Chen GH*; Cai RQ; Song XM; Deng JX
来源:Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2004, 107(2): 233-236.
DOI:10.1016/j.mseb.2003.11.020

摘要

In this paper, the preparation of discontinuous microcrystalline diamond with special structure, deposited on a porous silicon (PS) substrate by microwave chemical vapor deposition (MW-CVD) technology was reported, and the field electron emission of the diamonds were studied. Our experimental results indicated that the diamonds have a lower field emission threshold voltage (<0.8V/mum) and a higher field emission current density (>17.5A/cm(2)). A preliminary explanation of this special field electron emission was given in our paper.