A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency

作者：Schaake Christopher A^*; Brown David F; Swenson Brian L; Keller Stacia; Speck James S; Mishra Umesh K

来源：Semiconductor Science and Technology, 2013, 28(10): 105021.

DOI：10.1088/0268-1242/28/10/105021

Deep-level transient spectroscopy was performed on InGaN HEMTs and revealed a donor-like trap at the InGaN/GaN interface with net negative polarization. The trap was found to have an energy level of 0.071 eV. A photo-assisted capacitance-voltage (CV) measurement was performed on an InGaN diode. CV curves were measured before and after exposure to a broadband ultraviolet (UV) lamp. The UV lamp caused capacitance to increase as a result of traps being ionized. The trap density was found to be at least 4 x 10(11) cm(-2).

• 出版日期2013-10