Nonlinear Refraction in Nanocrystalline Silicon Carbide Films

作者：Borshch A A^*; Brodyn M S; Volkov V I; Rudenko V I; Lyakhovetskii V R; Semenov V A; Puzikov V M

来源：JETP Letters, 2008, 88(6): 386-388.

DOI：10.1134/S0021364008180094

Nonlinear refraction in nanocrystalline SiC films, which have been obtained using the method of direct deposition of carbon and silicon ions with an energy of 100 eV at substrate temperatures from 900 to 115 degrees C, has been investigated. It has been shown that the films exhibit a large third-order nonlinear susceptibility chi((3)) similar to 10(-6) esu (at lambda = 1064 nm and tau(p) = 10 ns).

• 出版日期2008-11