Atom Probe Tomography on Semiconductor Devices

作者：Khan Mansoor Ali; Ringer Simon P; Zheng Rongkun^*

来源：Advanced Materials Interfaces, 2016, 3(12): 1500713.

DOI：10.1002/admi.201500713

In this paper, state-of-the-art Atom Probe Tomography (APT) on industrial semiconductor products is reviewed to explore their device physics and to develop an understanding of atomic-scale interfaces in them. Different semiconductor devices, such as Light Emitting Diodes (LEDs), High-Electron-Mobility Transistors (HEMTs), Field-Effect Transistors (FETs), Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), Static or Dynamic Random Access Memory (SRAM or DRAM) and solar cells, have been reviewed in light of their surface morphologies, chemical compositions, dopant distributions, grain boundaries and interface characteristics. The APT approach allows for the further optimization of device techniques, which are suggested for better performance.

• 出版日期2016-6-21