科研之友
微信
新浪微博
Facebook
分享链接
摘要
The exposure of GaAs to laser ablated ZnTe causes the formation of donor (Te)-acceptor (Zn) pair states. The photonically transferred dopants resulted in a distinct transition at 1.378 eV (FWHM <= 30 meV), visualized by room temperature photocurrent spectroscopy. The presence of impurity absorption in the GaAs was confirmed by transmission measurements. Notably, from the standpoint of technological applications, flipping the applied bias (+/-1.0 V) to the ZnTe/GaAs heterostructure switches the spectral photocurrent response between the fundamental GaAs absorption and the donor-acceptor transition peak. The results further reveal the influence of the ablating laser line on the optoelectronic device properties.
- 出版日期2011-8-29
