Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

作者：Gholipour Morteza^*; Masoumi Nasser; Chen Ying Yu; Chen Deming; Pourfath Mahdi

来源：IEEE Transactions on Electron Devices, 2014, 61(12): 4000-4006.

DOI：10.1109/TED.2014.2362774

• Asymmetric gate (AG)
• graphene nanoribbon field-effect transistor (GNRFET)
• Schottky-barrier (SB)

The ambipolar behavior limits the performance of Schottky-barrier-type graphene nanoribbon field-effect transistors (SB-GNRFETs). We propose an asymmetric gate (AG) design for SB-GNRFETs, and show that it can significantly reduce the I-OFF. Simulation results indicate at least 40% and 5x improvement in the subthreshold swing and the I-ON/I-OFF ratio, respectively. We build an accurate semianalytical closed-form model for the current-voltage characteristics of SB-GNRFETs. The proposed Simulation Program with Integrated Circuit Emphasis (SPICE)-compatible model considering various design parameters and process variation effects, which enables efficient circuit-level simulations of SB-GNRFET-based circuits. Simulation results of benchmark circuits show that the average energy-delay product of the AG SB-GNRFETs is only similar to 22% of that of a symmetric gate for the ideal case and similar to 88% for devices with line edge roughness.

• 出版日期2014-12