Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric

作者：Basu Sarbani; Singh Pramod K; Sze Po Wen; Wang Yeong Her^*

来源：Solid-State Electronics, 2010, 54(8): 763-768.

DOI：10.1016/j.sse.2010.03.021

• MOSPHEMT
• GaAs
• LPD
• Al2O3
• Low temperature

A high breakdown voltage and a low gate leakage current Al0.2Ga0.8As/In0.15Ga0.85As metal-oxide-semiconductor-pseudomorphic high-electron mobility transistor (MOSPHEMT) with low temperature and low-cost liquid-phase-deposition (LPD) process are reported for the first time. The LPD-deposited 15 nm thin Al2O3 layers are used as gate insulator. The fabricated devices achieved peak extrinsic transconductance (g(m)) value at gate bias (V-GS) of 0 V for single power supply amplifier application. The fabricated 2 x 100 mu m(2) devices exhibited a peak g(m) of 161 mS/mm, a threshold voltage of -1.2 V, and a drain-to-source current (I-ds) of 310 mA/mm. These characteristics demonstrate that the LPD-deposited Al0.2Ga0.5As/In0.15Ga0.85As MOSPHEMTs have potential for microwave power device applications.

• 出版日期2010-8