Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

作者：Feng Gan^*; Suda Jun; Kimoto Tsunenobu

来源：IEEE Transactions on Electron Devices, 2012, 59(2): 414-418.

DOI：10.1109/TED.2011.2175486

• Edge termination
• junction termination extension (JTE)
• p-i-n diodes
• silicon carbide (SiC)

An edge termination method, referred to as space-modulated junction termination extension (SMJTE) combined with a mesa structure, is presented for ultrahigh-voltage p-i-n diodes in 4H-SiC. Numerical device simulations have been performed for over 15-kV-class 4H-SiC p-i-n diodes with the proposed edge termination. The structure exhibits a high breakdown capability with an improved tolerance for the deviation of impurity dose in the JTE region. Unlike conventional multi-implantation, the proposed termination technique utilizes a single-step implantation with a single mask. A desired laterally tapered doping profile is achieved by fragmenting a conventional JTE region using relatively wide spaces. The simple process of the proposed edge termination makes it applicable to fabrication of various high-voltage devices in 4H-SiC.

• 出版日期2012-2