Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum dIC/dt During Turn-OFF for High Power Trench Gate/Field-Stop IGBT Modules

作者：Chen, Yuxiang; Luo, Haoze; Li, Wuhua^*; He, Xiangning; Iannuzzo, Francesco; Blaabjerg, Frede

来源：IEEE Transactions on Power Electronics, 2017, 32(8): 6394-6404.

DOI：10.1109/TPEL.2016.2619620

• Dynamic thermo-sensitive electrical parameter (DTSEP)
• high power trench gate/field-stop IGBTs
• maximum collector current falling rate
• storage carrier behaviors

In this paper, a dynamic thermo-sensitive electrical parameter (DTSEP) for extracting the junction temperature of the trench gate/field-stop insulated gate bipolar transistor (IGBT) modules by using the maximum collector current falling rate is proposed. First, a theoretical model of the transient collector current during turn-OFF process is developed in terms of the behavior characteristics of the inside storage carriers. Then, the inherent linear relationship between the maximum collector current falling rate dI(C)/dt and junction temperature T-j is demonstrated and investigated. Fortunately, benefitting from the presence of the intrinsic parasitic inductance L-eE between the Kelvin and power emitters of IGBT modules, the maximu

• 出版日期2017-8
• 单位浙江大学