A Comparison of Single-Event Transients in Pristine and Irradiated Al0.3Ga0.7N/GaN HEMTs using Two-Photon Absorption and Heavy Ions

作者：Khachatrian A^*; Roche N J H; Buchner S; Koehler A D; Anderson T J; Ferlet Cavrois V; Muschitiello M; McMorrow D; Weaver B; Hobart K D

来源：IEEE Transactions on Nuclear Science, 2015, 62(6): 2743-2751.

DOI：10.1109/TNS.2015.2498286

• GaN
• heavy ions
• high-electron-mobility transistor (HEMT)
• laser
• single event transients

Single-event transients (SETs) were investigated in Al0.3Ga0.7N/GaN high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a number of different factors, including bias conditions, strike location, and material quality.

• 出版日期2015-12