Analysis of inductively coupled argon plasma-enhanced quantum-well intermixing process for multiple bandgap implementation

作者：Nie D; Mei T^*; Djie HS; Chin MK; Tang XH; Wang YX

来源：Journal of Crystal Growth, 2006, 288(1): 32-35.

DOI：10.1016/j.jerysgro.2005.12.037

• inductively coupled plasma
• quantum wells
• quantum-well intermixing
• photonic-integrated circuits

The inductively coupled argon (Ar) plasma-enhanced quantum-well intermixing has been investigated for the implementation of multiple bandgaps in an InGaAs/InGaAsP quantum-well laser structure. Multiple bandgap control is achieved by controlling the local defect concentrations without manipulating the critical rapid thermal annealing process using a multi-step plasma exposure or a spatial defect modulation. The interdiffusion process is found to obey Fick';s law and enhanced by the near-surface point defects after a short plasma exposure time. For a prolonged exposure, the enhancement is reduced attributed to the possible formation of defect clusters. With single-step plasma exposure, the defect concentrations, thus intermixing degree, can be controlled using a variable window opening. This work demonstrates the practical approaches of multiple bandgap creation suitable for the photonic-integrated circuit application.

• 出版日期2006-2-2
• 单位南阳理工学院