A Comparative Study of CMOS and Carbon Nanotube Field Effect Transistor Based Inverter at 32 nm Technology Node

作者：Saha P; Jain A^*; Sarkar S K

来源：Asian Journal of Chemistry, 2013, 25: S424-S426.

• CMOS
• Carbon nanotube field effect transistor
• Inverter
• Noise margin
• Power dissipation
• Delay

Carbon tanotabe field- effecttransistor is-emerging-as newipromising,device for futp.re nanotechnology solutions, Ittitilizes semiconducting I, carbon nanottibe as its channel whose quasi 1-D structure provides high mobility for near ballistic transport and better electrostatic control. In thisTaper we have designed:a basic inverter circtit -Using carbon.natiOtubefield effect transistor. The key perforthances of I inverter such as noise margin, average power and delay time are analyzed and compared with CMOS inverter. Both the inverters am %26apos; Siintilated indISPICE platforni. The sitnidated restilts of carbbn natiotube Belci effect transistor iriVetter shoWs improved performance in terms of noise,margin, power and delay time than CMOS inverter.

• 出版日期2013