Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si-1 (-) (x) (-) yGexCy on Si (100) using Raman spectroscopy

作者：Wasyluk Joanna; Perova Tatiana S^*; Meyer Francoise

来源：Thin Solid Films, 2010, 518: S151-S153.

DOI：10.1016/j.tsf.2009.10.076

• Raman spectroscopy
• SiGeC layer
• Stress analysis
• Substitutional carbon

The effect of carbon content on strain compensation in rapid thermal chemical vapour deposited Si-1 (-) (x) (-) yGexCy films was investigated using Raman spectroscopy as x varies from 10% to 16% and y varies from 0% to 1.8%. The dependence of the Raman intensities of the carbon-local modes and the Si-Si modes versus carbon content was analysed. A linear dependence has been revealed for the integrated and peak intensities of these vibrational modes versus C content for samples with x <= 16%. This shows that Raman scattering measurements can be utilised for determination of the substitutional carbon content in SiGeC layers with a Ge content up to 16%.

• 出版日期2010-1-1