A Wide Temperature, Radiation Tolerant, CMOS-Compatible Precision Voltage Reference for Extreme Radiation Environment Instrumentation Systems

作者：McCue Benjamin M^*; Blalock Benjamin J; Britton Charles L; Potts Jeff; Kemerling James; Isihara Kiyosi; Leines Matthew T

来源：IEEE Transactions on Nuclear Science, 2013, 60(3): 2272-2279.

DOI：10.1109/TNS.2013.2257850

• Bandgap reference
• CMOS
• dynamic threshold MOSFET (DTMOS)
• radiation hardening by design (RHBD)
• total ionizing dose (TID) radiation

Many design techniques have been incorporated into modern CMOS design practices to improve radiation tolerance of integrated circuits. Annular-gate NMOS structures have been proven to be significantly more radiation tolerant than the standard, straight-gate variety. Many circuits can be designed using the annular-gate NMOS and the inherently radiation tolerant PMOS. Bandgap reference circuits, however, typically require p-n junction diodes. These p-n junction diodes are the dominating factor in radiation degradation in bandgap reference circuits. This paper proposes a different approach to bandgap reference design to alleviate the radiation susceptibility presented by the p-n junction diodes.

• 出版日期2013-6