A vacancy-modulated self-selective resistive switching memory with pronounced nonlinear behavior

作者：Ma, Haili; Feng, Jie^*; Gao, Tian; Zhu, Xi

来源：Applied Physics A, 2017, 123(12): 730.

DOI：10.1007/s00339-017-1350-2

• Electrical conduction mechanisms
• Low-resistance state
• Operating currents
• Physicochemical property
• Resistance switching
• Resistive switching
• Resistive switching memory
• Switching behaviors

In this study, we report a self-selective (nonlinear) resistive switching memory cell, with high on-state half-bias nonlinearity of similar to 650, sub-mu A operating current, and high On/Off ratios above 100x. Regarding the cell structure, a thermal oxidized HfOx layer in combination with a sputtered Ta2O5 layer was configured as an active stack, with Pt and Hf as top and bottom electrodes, respectively. The Ta2O5 acts as a selective layer as well as a series resistor, which could make the resistive switching happened in HfOx layer. Through the analysis of the physicochemical properties and electrical conduction mechanisms at each state, a vacancy-modulated resistance switching model was proposed to explain the switching behavior. The conductivity of HfOx layer was changed by polarity-dependent drift of the oxygen vacancy (V-o), resulting in an electron hopping distance change during switching. With the help of Ta2O5 selective layer, high nonlinearity observed in low resistance state. The proposed material stack shows a promising prospect to act as a self-selective cell for 3D vertical RRAM application.

• 出版日期2017-11-3
• 单位上海交通大学