Deposition of thin films of Mg2Si1-xSnx solid solution by plasma-assisted co-sputtering

作者：Le Quoc H^*; Lacoste A; Bechu S; Bes A; Bourgault D; Fruchart D

来源：Journal of Alloys and Compounds, 2012, 538: 73-78.

DOI：10.1016/j.jallcom.2012.06.003

• Thermoelectrics
• Mg2Si-Mg2Sn solid solutions
• Thin films
• Plasma co-sputtering
• Microwave plasma

We report here preliminary results on the deposition and structural characterization of thin films of Mg2Si1-xSnx solid solutions (x = 0.4-0.6) with Ag-doping (for p-type material) by plasma co-sputtering, using individual targets of constituent elements. Polycrystalline thin films with nano-size crystallites were deposited on SiO2/Si substrates at room temperature. Chemical composition is controlled by the bias voltage of individual targets, while the microstructure is tailored by the flux and particle energy through the operating conditions namely, gas pressure, microwave power and geometrical configuration. The electrical conductivity strongly depends on layers microstructure.

• 出版日期2012-10-15