科研之友
微信
新浪微博
Facebook
分享链接
摘要
The performance of quantum dots (QDs) in optoelectronic devices suffers as a result of sub-bandgap states induced by the large fraction of atoms on the surface of QDs. Recent progress in passivating these surface states with thiol ligands and halide ions has led to competitive efficiencies. Here, we apply a hybrid ligand mixture to passivate PbSe QD sub-bandgap tail states via a low-temperature, solid-state ligand exchange. We show that this ligand mixture allows tuning of the energy levels and the physical QD size in the solid state during film formation. We hereby present a novel, postsynthetic path to tune the properties of QD films.
- 出版日期2015-9-3
