An Effective Capacitance Model for 28-nm and Beyond Copper Interconnect

作者：Xu, Yajun^*; Bai, Fanfei; Liu, Wuping; Xie, Chaoying

来源：IEEE Transactions on Electron Devices, 2013, 60(6): 1867-1871.

DOI：10.1109/TED.2013.2259237

• Capacitance model
• copper diffusion barrier
• low-kappa damage layer
• transition layer

In 28-nm CMOS technology, copper interconnect becomes complicated as the dielectric copper diffusion barrier and low-kappa damage compromise capacitance gain from low-kappa implementation. As a consequence, accurate and effective estimation of the interconnect capacitance is a very challenging task during integration and unit process development. This paper attempts to integrate the impacts of the technological innovations and presents a new compact capacitance model by modifying one of the existing empirical models. The new model demonstrates good agreement with Raphael simulation and less than 2% delta to the real Si data at 28-nm node. Effects of the transition layer and the low-kappa damage layer on capacitance and the impact of terminal capacitance on the coupling capacitance are discussed in detail.

• 出版日期2013-6
• 单位上海交通大学