摘要

Thin diamond layers were deposited over a Si substrate by the hot filament chemical vapor deposition technique by using MeH and H-2 gas mixture. The layers were analyzed by scanning electron microscopy and Raman spectroscopy. The diamond film morphol. and quality strongly depended on the MeH/H-2 ratio in the working gas. The films showed (111), (100) and ball-like morphol.

  • 出版日期2012-1