Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects

作者：Pankratov E L^*; Gus'kova O P; Drozdov M N; Abrosimova N D; Vorotyntsev V M

来源：Semiconductors, 2014, 48(5): 612-616.

DOI：10.1134/S1063782614050170

The germanium-distribution profile is investigated in a Si/SiO2/Si structure after the implantation of Ge-74 into SiO2 dielectric layer, bonding with the Si device layer, and high-temperature annealing. The anomalously high transport and accumulation of Ge-74 atoms near the SiO2/Si interface far from the bonded boundary is found. The observed Ge-74 distribution is beyond the framework of the existing model of diffusion of Ge in Si and SiO2 after postimplantation annealing. A modified model of diffusion of Ge atoms near the Si/SiO2 interface qualitatively explaining the observed features is proposed.

• 出版日期2014-5