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摘要
We report in this Rapid Communication an antilevitation behavior of Landau levels in vanishing magnetic fields in a high quality heterojunction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field, the positions of the magnetoresistance minima at Landau-level fillings nu = 4-6 move below the "traditional" Landau-level line to lower electron densities. Moreover, the even and odd filling factors show quantitatively different behaviors in antilevitation, suggesting that the exchange interactions may be important.
- 出版日期2016-10-17
