Analysis of SCM-Based SSD Performance in Consideration of SCM Access Unit Size, Write/Read Latencies and Application Request Size

作者：Takishita Hirofumi; Adachi Yutaka^*; Matsui Chihiro; Takecuhi Ken

来源：IEICE TRANSACTIONS ON ELECTRONICS, 2018, E101C(4): 253-262.

DOI：10.1587/transele.E101.C.253

• solid-state drive
• storage-class memory
• NAND flash memory

NAND flash memories used in solid-state drives (SSDs) will be replaced with storage-class memories (SCMs), which are comparable with NAND flash in their cost, and with DRAM in their speed. This paper describes the performance difference of the SCM/NAND flash hybrid SSD and the SCM-based SSD with between sector-unit read (512 Byte) and page-unit read (16 KByte, NAND flash page-size) using synthetic and real workload. Also, effect of the SCM read-unit size on SSD performance are analyzed. When SCM write/read latency is 0.1 us, performance difference of the SCM/NAND flash hybrid SSD with between page- and sector-unit read is about 1% and 6% at most for the write-intensive and read-intensive workloads, respectively. However, performance of the SCM-based SSD is significantly improved when sector-unit read is used because extra read latency does not occur. Especially, the SCM-based SSD IOPS is improved by 131% for proj_3 (read-hot-random), because its read request size is small but its read request ratio is large. This paper also shows IOPS of SCM-based SSD write/read with sector-unit read can be predicted by the average write/read request size of workloads.

• 出版日期2018-4