Stable and metastable Si negative-U centers in AlGaN and AlN

作者：Trinh Xuan Thang^*; Nilsson Daniel; Ivanov Ivan G; Janzen Erik; Kakanakova Georgieva Anelia; Nguyen Tien Son

来源：Applied Physics Letters, 2014, 105(16): 162106.

DOI：10.1063/1.4900409

Electron paramagnetic resonance studies of Si-doped AlxGa1-xN (0.79 <= x <= 1.0) reveal two Si negative-U (or DX) centers, which can be separately observed for x >= 0.84. We found that for the stable DX center, the energy vertical bar E-DX vertical bar of the negatively charged state DX-, which is also considered as the donor activation energy, abruptly increases with Al content for x similar to 0.83-1.0 approaching similar to 240 meV in AlN, whereas E-DX remains to be close to the neutral charge state E-d for the metastable DX center (similar to 11 meV below Ed in AlN).

• 出版日期2014-10-20