Air-stable n-type operation of Gd-contacted carbon nanotube field effect transistors

作者：Kim Hyo Suk^*; Jeon Eun Kyoung; Kim Ju Jin; So Hye Mi; Chang Hyunju; Lee Jeong O; Park Noejung

来源：Applied Physics Letters, 2008, 93(12): 123106.

DOI：10.1063/1.2990642

We report air-stable n-type operations of the single-walled carbon nanotube field effect transistors (SWNT-FETs) fabricated with Gd electrodes. Unlike previously reported n-type SWNT-FETs, our devices maintained their n-type operation characteristics in ambient atmosphere for more than two months. The shallow Gd films with a thickness below 20 nm are corroded by environmental oxygen, whereas the well-contacted Gd-SWNT interfaces underneath the thick Gd layers are protected from contaminations by air molecules. Theoretical studies based on the first-principles electronic structure calculations confirm that Gd layers have an excellent binding affinity to the SWNTs.

• 出版日期2008-9-22