Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector

作者：Wu, Di; Wang, Yuange; Zeng, Longhui^*; Jia, Cheng; Wu, Enping; Xu, Tingting; Shi, Zhifeng; Tian, Yongtao; Li, Xinjian; Tsang, Yuen Hong^*

来源：ACS Photonics, 2018, 5(9): 3820-3827.

DOI：10.1021/acsphotonics.8b00853

• PtSe2
• 2D layered materials
• heterojunction
• infrared photodetector
• CdTe

The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 x 10(11) Jones, a high current on/off ratio of 7 x 10(6), and a fast response speed of 8.1/43.6 mu s at room temperature. Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.

• 出版日期2018-9
• 单位郑州大学