A resistive switching memory device with a negative differential resistance at room temperature

作者：Kadhim, Mayameen S.; Yang, Feng^*; Sun, Bai^*; Wang, Yushu; Guo, Tao; Jia, Yongfang; Yuan, Ling; Yu, Yanmei; Zhao, Yong^*

来源：Applied Physics Letters, 2018, 113(5): 053502.

DOI：10.1063/1.5037191

• CHEMICAL ROUTE
• THIN-FILM
• ZNO
• BEHAVIOR
• MEMRISTORS
• FILAMENT

In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a low-cost and low temperature approach. In this approach, oxidation of zinc metal was achieved in a formamide/water mixture. Taking advantage of the product, a sandwiched structure, Ag/ZnO/Zn, was fabricated in which Ag acts as the top electrode, ZnO as the active layer and Zn foil as the bottom electrode, Resistive switching memory behavior (with an HRS/LRS resistance ratio of similar to 10) along with a negative differential resistance effect (the largest slope being -3.85) was synchronously observed for this device at room temperature. This device opens up possibilities for multifunctional components in future electronic applications. Published by AIP Publishing.

• 出版日期2018-7-30
• 单位福建师范大学; 西南交通大学