High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors

作者：Tosun Mahmut; Chuang Steven; Fang Hui; Sachid Angada B; Hettick Mark; Lin Yongjing; Zeng Yuping; Javey Ali^*

来源：ACS Nano, 2014, 8(5): 4948-4953.

DOI：10.1021/nn5009929

• transition metal dichalcogenides
• digital circuits
• monolayer semiconductors
• complementary logic
• CMOS electronics

In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form degenerately doped n+ contacts for electron Injection. An ON/OFF current ratio of >10(4) is achieved for both n- and p-FETs with similar ON current densities. A dc voltage gain of >12 is measured for the complementary WSe2 inverter. This work presents an important advance toward realization of complementary logic devices based on layered chalcogenide semiconductors for electronic applications.

• 出版日期2014-5