Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

作者：Zhao, Xiaolong; Chen, Liang; He, Yongning^*; Liu, Jinliang; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting; Zhang, Zhongbing; Ouyang, Xiaoping

来源：Applied Physics Letters, 2016, 108(17): 171103.

DOI：10.1063/1.4947085

• DOPED ZNO
• IRRADIATION

The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10(13) Omega cm due to the compensation of the donor defects (V-O) and acceptor defects (V-Zn and O-i) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications. Published by AIP Publishing.

• 出版日期2016-4-25
• 单位西安交通大学; 西北核技术研究所