A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETs

作者：Huang, Daming^*; Liu, W. J.; Liu, Zhiying; Liao, C. C.; Zhang, Li-Fei; Gan, Zhenghao; Wong, Waisum; Li, Ming-Fu

来源：IEEE Transactions on Electron Devices, 2009, 56(2): 267-274.

DOI：10.1109/TED.2008.2010585

• Charge pumping (CP)
• interface traps
• MOSFETs
• negative-bias temperature instability (NBTI)
• reaction-diffusion model

A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (similar to t(n)) of interface-trap generation is observed. The index n. is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics.

• 出版日期2009-2
• 单位复旦大学