An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric

作者：Cai, Ronggang^*; Kassa, Hailu G.; Marrani, Alessio; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

来源：Applied Physics Letters, 2014, 105(11): 113113.

DOI：10.1063/1.4896292

• ARRAYS

We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of semiconducting poly(triarylamine). The imprinting process results in a decreased switching voltage for the ferroelectric, by a factor of ca. 1.5, resulting in a decreased operating voltage compared to a reference FeFET with a continuous ferroelectric layer. The transistor consists of a large number of nanostripe-gated transistors placed in parallel, which also offers interesting possibilities for a strong size reduction of organic FeFETs.

• 出版日期2014-9-15
• 单位苏州大学