A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics

作者：Beneventi Giovanni Betti^*; Reggiani Susanna; Gnudi Antonio; Gnani Elena; Alian Alireza; Collaert Nadine; Mocuta Anda; Thean Aaron; Baccarani Giorgio

来源：IEEE Transactions on Electron Devices, 2015, 62(11): 3645-3652.

DOI：10.1109/TED.2015.2478847

• III-V MOSFET
• border traps
• InGaAs
• mobility
• modeling
• semiconductor device simulation
• Silicon-On-Insulator (SOI)
• technology computer-aided design (TCAD)

A simple analytical low-field electron mobility model to be employed for technology computer-aided design of thin-body MOSFETs based on III-V compound semiconductors is presented. The scattering sources accounted for in the model are Coulomb centers, lattice vibrations (i.e., phonons), and surface roughness. The dependence of the thin-body effective thickness on the transverse electric field is calculated through 1-D Schrodinger-Poisson numerical simulations and is introduced in the model by means of an appropriate analytical function. Then, the free-electron density distribution is determined by considering both quantization effects and oxide-semiconductor interface traps. The model is calibrated on the experimental data collected on In0.53Ga0.47As-on-InP thin-body MOSFETs featuring body thicknesses as low as 5 nm. In particular, the model accurately reproduces C-G-V-GS characteristics, effective mobility against inversion layer charge plots, and I-DS-V-GS curves at low V-DS.

• 出版日期2015-11