A New Millimeter-Wave Fixture Deembedding Method Based on Generalized Cascade Network Model

作者：Loo X S^*; Yeo K S; Chew K W J; Chan L H K; Ong S N; Do M A; Boon C C

来源：IEEE Electron Device Letters, 2013, 34(3): 447-449.

DOI：10.1109/LED.2012.2237157

• Layout
• millimeter-wave field-effect transistors
• scattering matrices

In this letter, a universal cascade-based deembedding technique was presented for on-wafer characterization of the RF CMOS device. As compared with existing deembedding approaches, it is developed based on unique combinations of two THRU structures that enable efficient deembedding of fixture parasitics without any inaccurate lumped approximation or requirement of known standards. The proposed deembedding technique is validated on 0.13-mu m CMOS devices and has been proven to be more accurate than existing lumped and cascade-based deembedding techniques. As a result, it gives deeper physical prediction on transistor gate capacitances and transconductance. Therefore, it is highly suitable to be applied for device characterization at millimeter-wave frequencies.

• 出版日期2013-3
• 单位南阳理工学院