A 5.79-dB NF, 30-GHz-BAND MONOLITHIC LNA WITH 10 mW POWER CONSUMPTION IN STANDARD 0.18-mu m CMOS TECHNOLOGY

作者：Chen Chi Chen; Lin Yo Sheng^*; Huang Guo Wei; Lu Shey Shi

来源：Microwave and Optical Technology Letters, 2009, 51(4): 933-937.

DOI：10.1002/mop.24250

• Ka-band
• CMOS
• LNA
• inductive peaking
• RC feedback

A 30-GHz (Ka-band) low-noise amplifier (LNA) with 10 mW power consumption (P(DC)) using standard 0.18-mu m CMOS technology was designed and implemented. To achieve sufficient gain, this LNA was composed of three cascade common-source stages. and a series peaking inductor (L(g3)) was added to the input terminal of the third stage to boost the peak gain (S(21-max)) from 11.7 (at 28.8 GHz) to 14.5 (at 28 GHz), i.e., 23.9% (simulation). Shunt RC feedback was adopted in the third stage for achieving good output impedance matching. At 30 GHz, this LNA achieved excellent input return loss (S(11)) of -19.5 dB, output loss (S(22)) of -23.8 dB, forward gain (S(21)) of 11.1 dB, reverse isolation (S(12)) of -49.2 dB, and noise figure of 5.79 dB. The corresponding gain/P(DC) was 1.11, which is better than those of the CMOS LNAs around 30 GHz reported in the literature. The measured input-referred 1-dB compression point (P(IdB-in)) and third-order intermodulation point (IIP3) were - 10.9 and -2 dBm, respectivel.y.

• 出版日期2009-4
• 单位中国科学院电工研究所