Fabrication of Electrode Groove on Silicon Solar Cell by High-Pressure Surface Discharge

作者：Hamada Toshiyuki^*; Arakawa Shunchi; Otsubo Masahisa; Sakoda Tatsuya

来源：Electronics and Communications in Japan, 2011, 94(4): 28-35.

DOI：10.1002/ecj.10305

• silicon nitride film
• surface discharge
• monocrystalline silicon solar cell
• back electrode length
• electrode groove
• front contact

We propose a low-cost plasma process technique to fabricate narrower front electrode grooves on a single crystalline silicon solar cell, in which a surface discharge operated at high pressure etches a silicon nitride film 150 nm thick on a silicon layer. Tests showed that the surface discharge could effectively etch the silicon nitride film in a short time; a high etching rate exceeding 3000 nm/min was obtained. Narrow and uniform grooves with a width of less than 70 mu m were obtained when the pressure in the chamber, the back electrode length, and the etching time were 152 kPa, 2 mm, and 10 s, respectively. Narrower electrode grooves could be obtained when the back electrode length was short and the pressure was high.

• 出版日期2011-4