An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory

作者：Zhang, Wei; Hu, Ying^*; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chen, Hsin-Lu; Su, Yu-Ting; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Su, Wan-Ching; Zheng, Jin-Cheng; Hung, Ya-Chi; Sze, Simon M.

来源：IEEE Electron Device Letters, 2015, 36(8): 772-774.

DOI：10.1109/LED.2015.2448756

• RRAM
• solid electrolyte
• electronic synapse device
• spike-timing-dependent plasticity learning (STDP)

The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc I-V cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductance states were obtained. The reference Pt/GeO/TiN RRAM was fabricated to certify the multilevel capability and was due to the character of the GeS solid electrolyte. Finally, the property of gradual conductance states was exploited to demonstrate spike-timing-dependent plasticity learning, which suggests device's potential for use as an electronic synapse device for neuromorphic systems.

• 出版日期2015-8
• 单位厦门大学; 中山大学; 西安电子科技大学