Al and Ni co-doped ZnO films with room temperature ferromagnetism, low resistivity and high transparence

作者：Yu, Mingpeng; Qiu, Hong^*; Chen, Xiaobai; Li, Hui; Gong, Wei

来源：Materials Chemistry and Physics, 2011, 126(3): 797-803.

DOI：10.1016/j.matchemphys.2010.12.041

• Ni and Al co-doped ZnO film
• Vacuum magnetic annealing
• Ferromagnetism
• Resistivity
• Transparence

Zn0.91Al0.07Ni0.02O and Zn0.90Al0.05Ni0.05O films of about 250 nm thick were deposited on glass substrates at 300 K by co-sputtering with ZnO:Al and Ni targets. The films were annealed in vacuum at 673 K for 2 h and then cooled down to room temperature under a magnetic field of 4.8 x 10(4) A m(-1) applied along the film plane. After this process the films showed room temperature ferromagnetism, a resistivity of about 2 x 10(-3) Omega cm and an average transmittance of 75% in the visible wavelength range. The films have a wurtzite structure with the c-axis orientation in the film growing direction and consist of thin columnar grains perpendicular to the substrate. A temperature dependence of the resistivity from 2 K to 300 K reveals that the carrier transport mechanism is thermally activated band conduction above 150 K and Mott's variable range hopping below 70 K.

• 出版日期2011-4-15
• 单位北京工商大学; 北京科技大学