Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications

作者：Lee Jungmoo^*; Kim Ohyun

来源：Japanese Journal of Applied Physics, 2011, 50(6): 06GF01.

DOI：10.1143/JJAP.50.06GF01

In this paper, a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) thin-film memory device with both top and bottom indium tin oxide (ITO) electrodes was fabricated and the feasibility of this device was verified. The device showed a bipolar switching property. A write-read-erase-read memory cycle test and a data retention test were performed under ambient conditions. The turn on/off process occurred owing to the reduction and oxidation mechanism of the PEDOT chain, and each interface influenced the on and off voltages. Lastly, the switching characteristic of the flexible memory device was investigated.

• 出版日期2011-6