A Novel STT-MRAM Design With Electric-Field-Assisted Synthetic Anti-Ferromagnetic Free Layer

作者：Hao, Runzi; Wang, Lei^*; Min, Tai

来源：IEEE Transactions on Magnetics, 2019, 55(3): 3400506.

DOI：10.1109/TMAG.2018.2866939

• Magnetic tunneling junction (MTJ)
• nonvolatile memory
• Ruderman-Kittel-Kasuya-Yosida (RKKY)
• spin-transfer torque (STT)
• synthetic anti-ferromagnetic (SAF)

Spin-transfer torque magnetic random-access memory (STT-MRAM) is one of the next-generation nonvolatile memories, which has the most promising industrial prospect and has generated lots of new ideas. One of the continuous challenges in STT-MRAM development is to reduce the critical write current. Recently, one published paper reported that under a small electric bias voltage, the synthetic anti-ferromagnetic (SAF) multilayer system could be switched between an anti-ferromagnetic coupling state and a ferromagnetic coupling state. Based on this phenomenon, we propose a new type of STT-MRAM of which the critical write current can be reduced by an assisting electric-field (E-field). Micromagnetic simulation has been performed to study the dynamic switching behavior of the magnetization of the SAF free layer with tunable Ruderman-Kittel-Kasuya-Yosida interaction under the impact of an E-field.

• 出版日期2019-3
• 单位西安交通大学