Diode lasers with asymmetric waveguide and improved beam properties

作者：Chen Jianfeng^*; Kipshidze Gela; Shterengas Leon

来源：Applied Physics Letters, 2010, 96(24): 241111.

DOI：10.1063/1.3452354

• claddings
• current density
• energy gap
• III-V semiconductors
• refractive index
• semiconductor lasers

Fast axis beam divergence of 1.95 mu m GaSb-based diode lasers was reduced to 42 degrees of full-width-at-half-maximum. The beam properties were improved thanks to development of efficient laser heterostructure with asymmetric waveguide. Near field was expanded almost exclusively into n-cladding by reduction in the refractive index step at the corresponding heterointeraface. The related reduction in the band offset between waveguide core and n-cladding was balanced by introduction of the thin carrier stopper layer. Multimode 100 mu m wide ridge waveguide lasers demonstrated continuous wave output power of about 1.5 W at 8 A at 20 degrees C.

• 出版日期2010-6-14