N-Polar InAlN/AlN/GaN MIS-HEMTs

作者：Brown David F^*; Nidhi; Wu Feng; Keller Stacia; DenBaars Steven P; Mishra Umesh K

来源：IEEE Electron Device Letters, 2010, 31(8): 800-802.

DOI：10.1109/LED.2010.2050052

• GaN
• high-electron-mobility transistor (HEMT)
• InAlN
• metal-insulator-semiconductor (MIS)
• N-face

N-polar metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) were fabricated from a GaN/AlN/InAlN/GaN heterostructure grown by metalorganic chemical vapor deposition on a vicinal sapphire substrate, using Si(3)N(4) as the gate insulator. Hall measurements in van der Pauw geometry on the heterostructure showed a sheet charge density and a mobility of 2.15 x 10(13) cm(-2) and 1135 cm(2) . V(-1) . s(-1), respectively. Resistance measurements revealed anisotropic conductivity with respect to the surface steps induced by the substrate misorientation, and the sheet resistance of the 2-D electron gas was as low as 226 Omega/rectangle in the parallel direction. MIS-HEMTs with a gate length of 0.7 mu m and a source-drain spacing of 2.2 mu m had a peak drain current of 1.47 A/mm and an on-resistance of 1.45 Omega . mm. At a drain bias of 8 V, the current-and power-gain cutoff frequencies were 14 and 25 GHz, respectively.

• 出版日期2010-8