A Genuine Power-Gatable Reconfigurable Logic Chip with FeRAM Cells

作者：Iida Masahiro^*; Koga Masahiro; Inoue Kazuki; Amagasaki Motoki; Ichida Yoshinobu; Saji Mitsuro; Iida Jun; Sueyoshi Toshinori

来源：IEICE - Transactions on Electronics, 2011, E94C(4): 548-556.

DOI：10.1587/transele.E94.C.548

• reconfigurable logic
• FeRAM
• power-gating
• non-volatile flip-flop
• NV-FF
• VGLC

An advantage of an RLD (reconfigurable logic device) such as an FPGA (field programmable gate array) is that it can be customized after being manufactured. Due to the aggressive technology scaling, device density is increasing, and it has become a serious problem in power consumption accordingly. In SoC of embedded systems, power gating is one of the major power reduction techniques. However, it is difficult to adopt SRAM-based RLDs because of the high overhead and SRAM being volatile: In this paper, we describe a TEG (test element group) chip of a reconfigurable logic based FeRAM (ferroelectric random access memory) technology. FeRAM brings reconfigurable logic devices the advantage of being a genuine power gater. The chip employs island-style routing architecture and uses a variable grain logic cell as a logic block. A NV-FF (non-volatile flip-flop), which contains FeRAM, a FF, and power-gating control circuits, is used as both configuration memories and FFs in a logic block. The NV-FF can transmit data between FeRAM and FF automatically when a power source is turned off/on. Thus chip-level power gating is possible. The hibernate/restore time is less than 1 ms. The chip has 18 x 18 logic blocks and an area of 54.76 mm(2).

• 出版日期2011-4