An InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor with high current gain and low offset voltage

作者：Tsai Jung Hui^*; Lour Wen Shiung; Chao Yi Ting; Ye Sheng Shiun; Ma Yung Chun; Jhou Jia Cing; Wu You Ren; Ou Yang Jhih Jhong

来源：Thin Solid Films, 2012, 521: 172-175.

DOI：10.1016/j.tsf.2011.12.081

• InP/InGaAs
• Metamorphic
• Heterojunction bipolar transistor
• Current gain
• Offset voltage

Excellent dc performance of an InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor (HBT) using a linearly graded InxGa1-xP metamorphic buffer layer grown on GaAs substrate is demonstrated. The employment of a delta-doped sheet between two undoped spacer layers could eliminate the potential spike at base-emitter junction and increase the effective barrier, which could prevent the hole injection from base into emitter. A maximum current gain of 255, a low offset voltage of 105 mV, and a small second (third) harmonic distortions of 0.545 (-0.05) at V-CE=2.5 V are obtained. The current gain and offset voltage are the best values than that of the previous InP/InGaAs metamorphic HBT.

• 出版日期2012-10-30