High-efficiency Si optical modulator using Cu travelling-wave electrode

作者：Yang, Yan^*; Fang, Qing; Yu, Mingbin; Tu, Xiaoguang; Rusli, Rusli; Lo, Guo-Qiang

来源：Optics Express, 2014, 22(24): 29978-29985.

DOI：10.1364/OE.22.029978

• MACH-ZEHNDER MODULATOR
• EXTINCTION-RATIO
• LOW-VOLTAGE
• SILICON

We demonstrate a high-efficiency and CMOS-compatible silicon Mach-Zehnder Interferometer (MZI) optical modulator with Cu traveling-wave electrode and doping compensation. The measured electro-optic bandwidth at V-bias = -5 V is above 30 GHz when it is operated at 1550 nm. At a data rate of 50 Gbps, the dynamic extinction ratio is more than 7 dB. The phase shifter is composed of a 3 mm-long reverse-biased PN junction with modulation efficiency (V-pi.L-pi) of similar to 18.5 V.mm. Such a Cu-photonics technology provides an attractive potentiality for integration development of silicon photonics and CMOS circuits on SOI wafer in the future.

• 出版日期2014-12-1