摘要

This letter presents a low-power active bandpass filter (BPF) at K-band fabricated by the standard 0.18 mu m 1P6M CMOS technology. The proposed filter is evolved from the conventional half-wavelength resonator filter, using the complementary- conducting-strip transmission line (CCS TL) as the half- wavelength resonator. Furthermore, the complementary MOS cross-couple pair is proposed as a form of current-reuse scheme for achieving low-power consumption and high Q-factor simultaneously. The simulated results indicate that the Q-factor of the proposed half-wavelength resonator can be boosted from 9 to 513 at 25.65 GHz compared with the resonator enhanced by the nMOS cross-couple pair to Q-factor of merely 43 under the same power consumption. The proposed active BPF of order two occupies the chip area of 360 mu m x 360 mu m without contact pads. The measured results show that the center frequency of the active BPF is 22.70 GHz and a bandwidth of 1.68 GHz (7.39 %). The measured P-1 dB and noise figure at 22.70 GHz are -7.65 dBm and 14.05 dB, respectively. There is a 56.84 dB suppression between the fundamental tone and the second harmonic when the input power is -11.26 dBm. While showing 0 dB loss and some residual gain, the active BPF consumes 2.0 mA at 1.65 V supply voltage with maximum of 0.15 dB insertion loss and 9.96 dB return loss at pass band.

  • 出版日期2008-2