Hybrid organic light-emitting device with inorganic mobility-tunable hole transport layer of silicon-rich silicon oxide

作者：Jiang D F; Yin Y; Ran G Z^*; Zhang B

来源：Journal of the Optical Society of America B-Optical Physics, 2011, 28(1): 89-92.

DOI：10.1364/JOSAB.28.000089

We report a hybrid organic light-emitting device (HOLED) with an inorganic hole transport layer (HTL) of silicon-rich silicon oxide (Si(1+x)O(2)), whose mobility can be tunable by changing the degree of excess silicon x. The structure of the HOLED is designed as indium tin oxide/ Si(1+x)O(2) (30nm)/ buffer/ AlQ (45nm)/ Bphen:Cs(2)CO(3) (15nm)/ Sm (5nm)/Au(15nm). When x is equal to 3.7, the corresponding mobility of Si(1+x)O(2) is about 3: 3 x 10(-5) cm(2) V(-1) s(-1), which is close to that of AlQ, and this HOLED has achieved a maximum current efficiency of 3: 6 cd/A at similar to 20mA/cm(2), which is even higher than that of the typical organic light-emitting device having NPB as an HTL.

• 出版日期2011-1
• 单位复旦大学; 北京大学