An Accurate Current Model for III-V Field Effect Transistors Using a Novel Concept of Effective Transmission Coefficient

作者：Rahman Ehsanur^*; Shadman Abir; Biswas Sudipta Romen; Datta Kanak; Khosru Quazi D M

来源：Journal of Nanoelectronics and Optoelectronics, 2017, 12(1): 80-84.

DOI：10.1166/jno.2017.1993

• Quantum Well MOSFET
• NEGF
• III-V Semiconductors
• Delta Doping
• Self-Consistent Simulation
• Transmission Coefficient

In this work, we investigate the transport phenomena in III-V material based buried channel Quantum Well MOSFET with a view to develop a simple and effective model for the device current. Device simulation has been performed in quantum ballistic regime using non equilibrium Green's NEGF) formalism. The simulated I-V characteristics using a novel concept of effective transmission coefficient has been found to define the reported experimental data with high accuracy. The proposed model has also been effective to capture the transport characteristics reported for other III-V material based field effect transistors. The concept of the proposed effective transmission coefficient and hence the model lends itself to be a simple and powerful device analysis tool which can be extensively used to predict the performance of a wide variety of compound semiconductor devices in the pre-fabrication stage. It has also demonstrated consistency with device characteristics for doping concentration and channel length scaling. Thus the model can help the device/process engineers to tune the devices for the best possible performance.

• 出版日期2017-1