Phase transitions in metastable phases of silicon

作者：Zeng, Zhidan^*; Zeng, Qiaoshi; Mao, Wendy L.; Qu, Shaoxing

来源：Journal of Applied Physics, 2014, 115(10): 103514.

DOI：10.1063/1.4868156

• RAMAN-SCATTERING
• HIGH-PRESSURE
• AMBIENT PRESSURE
• SI
• TRANSFORMATIONS
• GE
• NANOINDENTATION
• PHONONS
• SPECTRA
• SHAPE

Phase transitions in indentation induced Si-III/XII phases were investigated using a diamond anvil cell and nanoindentation combined with micro-Raman spectroscopy. The in situ high pressure Raman results demonstrate that the Si-III and Si-XII phases have very similar Raman spectra, indicating their relative amount cannot be determined if they are both present in a sample. The Si-III and Si-XII phases coexist in the indentations produced by a nanoindenter on a single crystalline silicon wafer as a result of the local residual compressive stresses near 1 GPa. High power laser annealing on the indentations can initiate a rapid Si-III/XII -> Si-I phase transition. The newly formed polycrystalline Si-I phase initially has very small grain size, and the grains grow when the annealing time is extended. Si-IV phase was not observed in our experiment.

• 出版日期2014-3-14
• 单位浙江大学